US 12,173,428 B2
Controlled surface chemistry for polytypic and microstructural selective growth on hexagonal SiC substrates
Jesse A. Johnson, II, Melbourne, FL (US); Brian P. Tucker, Rockledge, FL (US); Adam J. Duzik, Rockledge, FL (US); and Justin J. Hill, Cocoa, FL (US)
Assigned to Mainstream Engineering Corporation, Rockledge, FL (US)
Filed by Mainstream Engineering Corporation, Rockledge, FL (US)
Filed on Oct. 7, 2022, as Appl. No. 17/961,663.
Prior Publication US 2024/0133077 A1, Apr. 25, 2024
Int. Cl. C30B 33/12 (2006.01); C30B 29/26 (2006.01); C30B 29/66 (2006.01)
CPC C30B 29/66 (2013.01) [C30B 29/26 (2013.01); C30B 33/12 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method for providing a mechanically prepared domed-substrate composed of single crystal hexagonal silicon carbide that serves as the medium for determining the role off-cut degree and orientation plays on altering surface chemistry for polytypic and microstructural selectivity through screening of silicon carbide surfaces that support surface chemistries and kinetics of selective polytypic and microstructural growth modes during silicon carbide deposition, comprising:
a. fabricating a silicon carbide domed substrate;
b. forming a step-terrace growth surface on the domed surface of said silicon carbide domed substrate by hydrogen etching;
c. performing silicon carbide deposition upon said growth surface, thereby creating a silicon carbide epitaxial domed wafer; and
d. performing characterization of said silicon carbide epitaxial domed wafer.