	US 12,173,401 B2
	Method for manufacturing semiconductor device, and film-forming device
Zeyuan Ni, Yamanashi (JP); and Taiki Kato, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Appl. No. 17/761,943
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
PCT Filed Sep. 14, 2020, PCT No. PCT/JP2020/034682 § 371(c)(1), (2) Date Mar. 18, 2022, PCT Pub. No. WO2021/060047, PCT Pub. Date Apr. 1, 2021.
Claims priority of application No. 2019-174644 (JP), filed on Sep. 25, 2019.
Prior Publication US 2022/0372618 A1, Nov. 24, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01)

CPC C23C 16/455 (2013.01) [C23C 16/4408 (2013.01); H01L 21/02186 (2013.01); H01L 21/02205 (2013.01); H01L 21/0228 (2013.01)]

9 Claims

1. A method for manufacturing a semiconductor device including a TiN film, the method comprising:

supplying TiCl₄gas to a substrate;

purging the TiCl₄gas;

supplying NH₃gas to the substrate;

purging the NH₃gas; and

supplying an inhibitor that inhibits adsorption of TiCl₄or NH₃to the substrate, wherein a plurality of cycles each including the supplying the TiCl₄gas, the purging the TiCl₄gas, the supplying the NH₃gas, and the purging the NH₃gas are performed,

at least a part of the plurality of cycles includes the supplying the inhibitor, and

after the supplying the inhibitor is performed, the supplying the TiCl₄gas or the supplying the NH₃gas is performed without purging the inhibitor, or, after purging the inhibitor for a shorter time than the purging the TiCl₄gas or the purging the NH₃gas, the supplying the TiCl₄gas or the supplying the NH₃gas is performed.