US 12,173,398 B2
Cr—Si sintered body, sputtering target, and method for producing thin film
Hiroyuki Hara, Ayase (JP); Masami Mesuda, Ayase (JP); and Ayaka Masuda, Ayase (JP)
Assigned to TOSOH CORPORATION, Shunan (JP)
Appl. No. 17/906,927
Filed by TOSOH CORPORATION, Shunan (JP)
PCT Filed Mar. 24, 2021, PCT No. PCT/JP2021/012302
§ 371(c)(1), (2) Date Sep. 21, 2022,
PCT Pub. No. WO2021/193741, PCT Pub. Date Sep. 30, 2021.
Claims priority of application No. 2020-055755 (JP), filed on Mar. 26, 2020.
Prior Publication US 2023/0121940 A1, Apr. 20, 2023
Int. Cl. H01J 37/34 (2006.01); C23C 14/34 (2006.01)
CPC C23C 14/3414 (2013.01) [H01J 37/3426 (2013.01)] 20 Claims
 
1. A Cr—Si sintered body comprising Cr and Si,
wherein the Cr—Si sintered body comprises a crystalline CrSi2 phase and a crystalline Si phase,
a content of the Si phase in the Cr—Si sintered body is at least 40% by mass,
a relative density of the Cr—Si sintered body relative to a true density of the Cr—Si sintered body is at least 95%,
the CrSi2 phase has an average crystal grain size of 40 μm or less,
the Si phase has an average crystal grain size of 30 μm or less,
a total content of impurities in the Cr—Si sintered body is 200 ppm by mass or less, and
the impurities are composed of at least one element selected from the group consisting of Mn, Fe, Mg, Ca, Sr, and Ba.