US 12,172,263 B2
Chemical mechanical planarization tool
Michael Yen, Hsinchu (TW); Kao-Feng Liao, Hsinchu (TW); Hsin-Ying Ho, Kaohsiung (TW); Chun-Wen Hsiao, Hsinchu (TW); Sheng-Chao Chuang, Hsinchu (TW); Ting-Hsun Chang, Kaohsiung (TW); Fu-Ming Huang, Shengang Township (TW); Chun-Chieh Lin, Hsinchu (TW); Peng-Chung Jangjian, Zhudong Township (TW); Ji James Cui, Hsinchu (TW); Liang-Guang Chen, Hsinchu (TW); Chih Hung Chen, Hsinchu (TW); and Kei-Wei Chen, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 5, 2023, as Appl. No. 18/312,753.
Application 18/312,753 is a continuation of application No. 16/550,021, filed on Aug. 23, 2019, granted, now 11,679,469.
Prior Publication US 2023/0271298 A1, Aug. 31, 2023
Int. Cl. B24B 37/26 (2012.01); B24B 37/005 (2012.01); B24B 37/04 (2012.01); B24B 37/24 (2012.01)
CPC B24B 37/26 (2013.01) [B24B 37/005 (2013.01); B24B 37/042 (2013.01); B24B 37/24 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A chemical mechanical planarization (CMP) tool comprising:
a platen; and
a polishing pad attached to the platen, wherein a first surface of the polishing pad facing away from the platen comprises a first polishing zone and a second polishing zone, wherein the first polishing zone and the second polishing zone are concentric polishing zones around a center of the polishing pad, wherein the first polishing zone and the second polishing zone comprise different materials and have different groove patterns.