US 12,172,117 B2
Laminar gas flow filter
Jyh-Shiou Hsu, Hsin-Chu (TW); Wen-Hsun Tsai, Taichung (TW); Chien-Chun Hu, Taichung (TW); Kuang-Wei Cheng, Hsinchu (TW); and Sung-Ju Huang, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Hsinchu (TW)
Filed on Jan. 10, 2022, as Appl. No. 17/572,375.
Claims priority of provisional application 63/220,082, filed on Jul. 9, 2021.
Prior Publication US 2023/0012317 A1, Jan. 12, 2023
Int. Cl. B01D 46/10 (2006.01); B01D 29/01 (2006.01); B01D 35/30 (2006.01); B01D 39/20 (2006.01); B01D 61/18 (2006.01); H01L 21/67 (2006.01); H01L 21/673 (2006.01)
CPC B01D 46/10 (2013.01) [B01D 29/016 (2013.01); B01D 35/30 (2013.01); B01D 39/2089 (2013.01); B01D 61/18 (2013.01); H01L 21/67393 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for supporting environmental control in a semiconductor wafer processing space, said method comprising:
flowing a first gas under pressure in a first direction through a first diffuser tube, thereby generating a first lateral flow of gas through a sidewall of the first diffuser tube;
flowing a second gas under pressure in a second direction through a second diffuser tube, thereby generating a second lateral flow of gas through a sidewall of the second diffuser tube, said second direction being opposite the first direction;
combining the first and second lateral flows of gas within a housing; and
outputting the combined lateral flows of gas from the housing to produce a laminar gas flow covering an opening to the semiconductor wafer processing space.