US 11,856,872 B2
Variable resistance memory device and method of manufacturing the same
Jaeho Jung, Seoul (KR); Kwangmin Park, Seoul (KR); Jonguk Kim, Yongin-si (KR); and Dongsung Choi, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 17, 2021, as Appl. No. 17/204,599.
Claims priority of application No. 10-2020-0084795 (KR), filed on Jul. 9, 2020.
Prior Publication US 2022/0013722 A1, Jan. 13, 2022
Int. Cl. H01L 45/00 (2006.01); H10N 70/00 (2023.01); H10B 63/00 (2023.01)
CPC H10N 70/066 (2023.02) [H10B 63/845 (2023.02); H10N 70/063 (2023.02); H10N 70/068 (2023.02); H10N 70/841 (2023.02); H10N 70/883 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A variable resistance memory device comprising:
first conductive lines extending in a first direction;
second conductive lines extending in a second direction and crossing the first conductive lines in a plan view; and
cell structures respectively provided at crossing points of the first conductive lines and the second conductive lines in the plan view,
wherein each of the cell structures comprises a switching pattern, a variable resistance pattern, and a first electrode provided between the switching pattern and a first conductive line, the first electrode including carbon,
wherein each of the first conductive lines comprises an upper pattern including a metal nitride in an upper portion thereof, and
wherein the upper pattern is in contact with a bottom surface of the first electrode.