CPC H10N 50/01 (2023.02) [H10N 50/80 (2023.02)] | 20 Claims |
1. A device comprising:
a Magnetic Tunnel Junction (MTJ) stack comprising:
a bottom electrode;
a bottom magnetic electrode over the bottom electrode;
a tunnel barrier over the bottom magnetic electrode;
a top magnetic electrode over the tunnel barrier; and
a top electrode over the top magnetic electrode; and
a dielectric protection layer extending onto a sidewall of the MTJ, wherein the dielectric protection layer comprises:
a first portion;
a second portion lower than and joined to the first portion; and
a third portion lower than and joined to the second portion, wherein the first portion, the second portion, and the third portion have different thicknesses.
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