US 11,856,864 B2
Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode
Yi Yang, Fremont, CA (US); Dongna Shen, San Jose, CA (US); and Yu-Jen Wang, San Jose, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 29, 2022, as Appl. No. 17/815,971.
Application 16/452,909 is a division of application No. 16/008,629, filed on Jun. 14, 2018, granted, now 10,418,547, issued on Sep. 17, 2019.
Application 17/815,971 is a continuation of application No. 17/121,394, filed on Dec. 14, 2020, granted, now 11,430,947.
Application 17/121,394 is a continuation of application No. 16/452,909, filed on Jun. 26, 2019, granted, now 10,868,242, issued on Dec. 15, 2020.
Prior Publication US 2022/0367792 A1, Nov. 17, 2022
Int. Cl. H10N 50/01 (2023.01); H01F 10/32 (2006.01); H01F 41/34 (2006.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10B 61/00 (2023.01)
CPC H10N 50/01 (2023.02) [H01F 10/3254 (2013.01); H01F 41/34 (2013.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10B 61/00 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first electrode;
a first conductive feature interfacing with the first electrode, the first conductive feature having a first width in a first direction;
a second conductive feature interfacing with the first conductive feature, the second conductive feature having a second width in the first direction that is different than the first width, wherein the second conductive feature has a top surface facing away from the first electrode;
a first magnetic tunneling junction (MTJ) structure interfacing with the second conductive feature and extending to a first height over the first electrode, wherein the first MTJ structure completely covers the top surface of the second conductive feature;
a second MTJ structure interfacing with the first electrode and extending to a second height over the first electrode, the second height being different than the first height; and
a dielectric layer extending continuously from the second MTJ structure to the first conductive feature.