US 11,856,804 B2
Imaging display device and electronic device
Takayuki Ikeda, Kanagawa (JP); and Naoto Kusumoto, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Dec. 28, 2021, as Appl. No. 17/563,187.
Application 17/563,187 is a continuation of application No. 16/605,253, granted, now 11,217,635, previously published as PCT/IB2018/052615, filed on Apr. 16, 2018.
Claims priority of application No. 2017-090230 (JP), filed on Apr. 28, 2017.
Prior Publication US 2022/0123070 A1, Apr. 21, 2022
Int. Cl. H10K 59/60 (2023.01); G06N 3/02 (2006.01); H04N 7/14 (2006.01); H01L 27/12 (2006.01); H01L 27/146 (2006.01)
CPC H10K 59/60 (2023.02) [G06N 3/02 (2013.01); H04N 7/144 (2013.01); H01L 27/1225 (2013.01); H01L 27/14612 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a photoelectric conversion element;
an insulating layer over the photoelectric conversion element;
a substrate over the insulating layer;
a conductive layer in the insulating layer and the substrate;
a first transistor and a second transistor over the substrate;
a light-emitting element over the first transistor and the second transistor; and
a third transistor between the first substrate and the first transistor,
wherein the photoelectric conversion element is electrically connected to the first transistor through the conductive layer,
wherein the light-emitting element is electrically connected to the second transistor,
wherein the light-emitting element and the first transistor overlap with each other, and
wherein the first transistor and the photoelectric conversion element overlap with each other.