US 11,856,770 B2
Semiconductor device, method of manufacturing the same, and massive data storage system including the same
Kwangyoung Jung, Hwaseong-si (KR); Jaebok Baek, Osan-si (KR); Giyong Chung, Seoul (KR); and Jeehoon Han, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 24, 2021, as Appl. No. 17/357,213.
Claims priority of application No. 10-2020-0144930 (KR), filed on Nov. 3, 2020.
Prior Publication US 2022/0139945 A1, May 5, 2022
Int. Cl. H10B 43/10 (2023.01); H01L 25/18 (2023.01); H01L 25/065 (2023.01); H10B 43/27 (2023.01); H01L 23/00 (2006.01)
CPC H10B 43/10 (2023.02) [H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H10B 43/27 (2023.02); H01L 24/08 (2013.01); H01L 2224/08145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a gate electrode structure on a substrate, the gate electrode structure including gate electrodes spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, each of the gate electrodes extending in a second direction parallel to the upper surface of the substrate;
a channel on the substrate and extending through the gate electrode structure in the first direction;
first division patterns apart from each other in the second direction, each of the first division patterns extending in the second direction through the gate electrode structure; and
a second division pattern between the first division patterns, the second division pattern and the first division patterns together dividing a first gate electrode among the gate electrodes in a third direction parallel to the upper surface of the substrate and crossing the second direction,
wherein the second division pattern has a shape in a plan view of a peanut from which opposite ends are removed, and the second division pattern overlaps ones of the gate electrodes above the first gate electrode in the first direction.