US 11,856,766 B2
Memory cell having programmable material comprising at least two regions comprising SiNx
Venkatakrishnan Sriraman, Singapore (SG); Dae Hong Eom, Singapore (SG); Ramanathan Gandhi, Boise, ID (US); Donghua Li, Singapore (SG); and Ashok Kumar Muthukumaran, Singapore (SG)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 2, 2021, as Appl. No. 17/391,377.
Prior Publication US 2023/0031891 A1, Feb. 2, 2023
Int. Cl. H10B 43/27 (2023.01); H10B 41/27 (2023.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 29/66 (2006.01)
CPC H10B 41/27 (2023.02) [H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/788 (2013.01); H01L 29/792 (2013.01); H10B 43/27 (2023.02)] 30 Claims
OG exemplary drawing
 
1. A memory cell comprising:
channel material;
charge-passage material;
programmable material;
a charge-blocking region;
a control gate; and
the programmable material comprising at least two regions comprising SiNx having a region comprising SiOy therebetween, where “x” is 0.5 to 3.0 and “y” is 1.0 to 3.0.