US 11,856,752 B2
Semiconductor device and method for fabricating the same
Ki-Hyung Nam, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 3, 2021, as Appl. No. 17/306,152.
Application 17/306,152 is a continuation of application No. 16/423,203, filed on May 28, 2019, granted, now 11,004,854.
Claims priority of application No. 10-2018-0141459 (KR), filed on Nov. 16, 2018.
Prior Publication US 2021/0288053 A1, Sep. 16, 2021
Int. Cl. H10B 12/00 (2023.01); H01L 21/308 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01)
CPC H10B 12/34 (2023.02) [H01L 21/3086 (2013.01); H01L 29/0649 (2013.01); H01L 29/4236 (2013.01); H10B 12/0335 (2023.02); H10B 12/053 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an active region in a substrate;
an isolation film which defines the active region in the substrate;
a gate trench which extends across the active region and the isolation film, and includes a first trench in the active region and a second trench in the isolation film;
a gate electrode which includes a main gate electrode and a pass gate electrode, the main gate electrode filling a lower part of the first trench, and the pass gate electrode filling a lower part of the second trench; and
a support structure on the pass gate electrode, the support structure filling an upper part of the second trench,
wherein a height of an upper surface of the main gate electrode from a bottom surface of the main gate electrode is greater than a height of an upper surface of the pass gate electrode from a bottom surface of the pass gate electrode, wherein a bottom surface of the pass gate electrode is lower than a bottom surface of the main gate electrode.