US 11,856,657 B2
Closed loop temperature controlled circuit to improve device stability
Fuchao Wang, Plano, TX (US); Olivier Leneel, Saint Martin d Uriage (FR); and Ravi Shankar, Singapore (SG)
Assigned to STMICROELECTRONICS ASIA PACIFIC PTE LTD, Singapore (SG); and STMICROELECTRONICS, INC., Coppell, TX (US)
Filed by STMICROELECTRONICS ASIA PACIFIC PTE LTD, Singapore (SG); and STMICROELECTRONICS, INC., Coppell, TX (US)
Filed on Sep. 10, 2021, as Appl. No. 17/472,247.
Application 17/472,247 is a division of application No. 16/233,926, filed on Dec. 27, 2018, granted, now 11,140,750.
Application 16/233,926 is a division of application No. 14/856,473, filed on Sep. 16, 2015, granted, now 10,206,247, issued on Feb. 12, 2019.
Application 14/856,473 is a division of application No. 14/586,231, filed on Dec. 30, 2014, granted, now 9,165,853, issued on Oct. 20, 2015.
Application 14/586,231 is a division of application No. 12/902,005, filed on Oct. 11, 2010, granted, now 8,927,909, issued on Jan. 6, 2015.
Prior Publication US 2022/0030667 A1, Jan. 27, 2022
Int. Cl. H05B 3/00 (2006.01); H05B 1/02 (2006.01); H05B 3/34 (2006.01); H05B 3/12 (2006.01); H01L 23/34 (2006.01); H05B 3/02 (2006.01); H05B 3/06 (2006.01)
CPC H05B 3/0014 (2013.01) [H01L 23/34 (2013.01); H01L 23/345 (2013.01); H05B 1/0227 (2013.01); H05B 3/02 (2013.01); H05B 3/06 (2013.01); H05B 3/12 (2013.01); H05B 3/34 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/15311 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure, comprising:
a semiconductor substrate;
an active circuit in the semiconductor substrate;
a control unit in the semiconductor substrate;
a first dielectric layer over the active circuit and the control unit; and
a thin film element over the first dielectric layer, the thin film element electrically coupled to the control unit.