US 11,855,635 B2
Transistor DV/DT control circuit
Hongwei Jia, Aliso Viejo, CA (US); Santosh Sharma, Austin, TX (US); Daniel M. Kinzer, El Segundo, CA (US); Victor Sinow, Fresno, CA (US); and Matthew Anthony Topp, Colorado Springs, CO (US)
Assigned to Navitas Semiconductor Limited, Dublin (IE)
Filed by Navitas Semiconductor Limited, Dublin (IE)
Filed on Jun. 29, 2022, as Appl. No. 17/853,740.
Claims priority of provisional application 63/202,940, filed on Jun. 30, 2021.
Prior Publication US 2023/0006657 A1, Jan. 5, 2023
Int. Cl. H03K 3/012 (2006.01)
CPC H03K 3/012 (2013.01) 15 Claims
OG exemplary drawing
 
1. A circuit comprising:
a first transistor having a first gate terminal, a first source terminal and a first drain terminal;
a second transistor having a second gate terminal, a second source terminal and a second drain terminal, the second drain terminal coupled to the first gate terminal;
a control circuit coupled to the second gate terminal and arranged to change a conductive state of the second transistor in response to receiving an input signal; and
an impedance element coupled in series to the second transistor;
a detection circuit coupled to the first gate terminal;
a third transistor having a third gate terminal, a third source terminal and a third drain terminal;
a sensing circuit coupled to the impedance element and arranged to sense an impedance value of the impedance element; and
a current sink coupled to the second source terminal and to the sensing circuit;
wherein the detection circuit is coupled to the third gate terminal and the third drain terminal is coupled to the first gate terminal; and
wherein the detection circuit is arranged to sense a voltage at the first gate terminal, and in response to the voltage at the first gate terminal reaching a value below a threshold voltage, change a state of the third transistor to a conductive state.