US 11,855,603 B2
Methods of manufacturing acoustic wave device with anti-reflection layer
Satoru Matsuda, Toyonaka (JP); Tatsuya Fujii, Nagaokakyo (JP); Yoshiro Kabe, Kobe (JP); and Kenji Nagano, Ibaraki (JP)
Assigned to Skyworks Solutions, Inc., Irvine, CA (US)
Filed by Skyworks Solutions, Inc., Irvine, CA (US)
Filed on Mar. 31, 2022, as Appl. No. 17/657,533.
Application 17/657,533 is a division of application No. 16/790,408, filed on Feb. 13, 2020, granted, now 11,394,364.
Claims priority of provisional application 62/806,560, filed on Feb. 15, 2019.
Prior Publication US 2022/0224308 A1, Jul. 14, 2022
Int. Cl. H03H 9/02 (2006.01); H03H 9/25 (2006.01); H03H 9/64 (2006.01); H03H 9/72 (2006.01); H03H 9/145 (2006.01)
CPC H03H 9/02574 (2013.01) [H03H 9/02559 (2013.01); H03H 9/02834 (2013.01); H03H 9/02842 (2013.01); H03H 9/14502 (2013.01); H03H 9/14541 (2013.01); H03H 9/25 (2013.01); H03H 9/6406 (2013.01); H03H 9/725 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing an acoustic wave device, the method comprising:
providing an acoustic wave device structure with one or more interdigital transducer electrode layers on a piezoelectric layer, the one or more interdigital transducer electrode layers including a conductive layer;
forming an anti-reflection layer over the conductive layer, the anti-reflection layer including silicon; and
performing a photolithography process to pattern an interdigital transducer electrode from the one or more interdigital transducer electrode layers, the anti-reflection layer reducing reflection from the conductive layer during the photolithography process.