US 11,855,596 B2
Semiconductor integrated circuit device
Kyu Dong Hwang, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Feb. 12, 2021, as Appl. No. 17/175,504.
Application 17/175,504 is a continuation of application No. 16/368,142, filed on Mar. 28, 2019.
Claims priority of application No. 10-2018-0069535 (KR), filed on Jun. 18, 2018.
Prior Publication US 2021/0167742 A1, Jun. 3, 2021
Int. Cl. H03F 3/45 (2006.01)
CPC H03F 3/45179 (2013.01) 12 Claims
OG exemplary drawing
 
1. A semiconductor integrated circuit device, comprising:
a first input unit configured to change a voltage level of a first output node based on a first input signal;
a second input unit configured to change a voltage level of a second output node based on a second input signal;
a first current driver configured to supply a first current to the first output node based on a voltage level of a boosting node;
a gain booster configured to change the voltage level of the boosting node based on the voltage level of the first output node and configured to change the voltage level of the boosting node after a predetermined time when the voltage level of the first output node is changed;
a capacitor configured to be connected between an input terminal of the first input unit and the boosting node; and
a second current driver configured to supply a second current to the second output node based on the voltage level of the first output node.