US 11,855,452 B2
Power clamp
Ken-Hao Fan, Hsinchu (TW); Yu-Ti Su, Tainan (TW); Tzu-Cheng Kao, Hsinchu (TW); Ming-Fu Tsai, Hsinchu (TW); and Chia-Lin Hsu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Dec. 9, 2022, as Appl. No. 18/063,690.
Application 18/063,690 is a continuation of application No. 17/388,567, filed on Jul. 29, 2021, granted, now 11,557,895.
Claims priority of provisional application 63/182,695, filed on Apr. 30, 2021.
Prior Publication US 2023/0105593 A1, Apr. 6, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H02H 9/04 (2006.01)
CPC H02H 9/046 (2013.01) 20 Claims
OG exemplary drawing
 
1. An electrostatic discharge (ESD) power clamp device, comprising:
an ESD detection circuit;
a controlling circuit coupled with the ESD detection circuit;
a field effect transistor (FET) coupled with the controlling circuit; and
an impedance element having a first terminal coupled with the FET, the impedance element comprising a resistor,
wherein the FET comprises:
a drain terminal coupled with a first supply node;
a gate terminal coupled with an output end of the controlling circuit;
a source terminal coupled with a second supply node via the impedance element; and
a bulk terminal coupled with the second supply node, and
wherein a second terminal of the impedance element is coupled with the second supply node.