CPC H01L 29/7371 (2013.01) [H01L 29/1004 (2013.01); H01L 29/45 (2013.01); H01L 29/66242 (2013.01)] | 20 Claims |
1. A structure comprising:
a substrate;
a collector region within the substrate;
an emitter region over the substrate and which comprises silicon based material;
an intrinsic base;
an extrinsic base overlapping the emitter region and the intrinsic base; and
an inverted “T” shaped spacer comprising insulator material which separates the emitter region from the extrinsic base.
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