US 11,855,195 B2
Transistor with wrap-around extrinsic base
Xinshu Cai, Singapore (SG); Shyue Seng Tan, Singapore (SG); Vibhor Jain, Williston, VT (US); John J. Pekarik, Underhill, VT (US); Kien Seen Daniel Chong, Singapore (SG); Yung Fu Chong, Singapore (SG); Judson R. Holt, Ballston Lake, NY (US); Qizhi Liu, Lexington, MA (US); and Kenneth J. Stein, Sandy Hook, CT (US)
Assigned to GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore (SG)
Filed by GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed on Oct. 25, 2021, as Appl. No. 17/509,604.
Prior Publication US 2023/0127768 A1, Apr. 27, 2023
Int. Cl. H01L 29/737 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 29/10 (2006.01)
CPC H01L 29/7371 (2013.01) [H01L 29/1004 (2013.01); H01L 29/45 (2013.01); H01L 29/66242 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A structure comprising:
a substrate;
a collector region within the substrate;
an emitter region over the substrate and which entirely comprises mono-crystalline silicon based material with an insulator material thereon;
an intrinsic base under the emitter region and comprising semiconductor material;
an extrinsic base surrounding the emitter and over the intrinsic base;
a spacer separating the emitter region from the extrinsic base; and
a plurality of semiconductor materials comprising SiGe material sandwiched between undoped semiconductor material, the SiGe material comprising a raised SiGe intrinsic base, and the undoped semiconductor material comprising an intrinsic emitter region and an intrinsic collector region.