US 11,855,191 B2
Vertical FET with contact to gate above active fin
Brent Anderson, Jericho, VT (US); Junli Wang, Slingerlands, NY (US); Indira Seshadri, Niskayuna, NY (US); Chen Zhang, Guilderland, NY (US); Ruilong Xie, Niskayuna, NY (US); Joshua M. Rubin, Albany, NY (US); and Hemanth Jagannathan, Niskayuna, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Oct. 6, 2021, as Appl. No. 17/450,121.
Prior Publication US 2023/0104456 A1, Apr. 6, 2023
Int. Cl. H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01)
CPC H01L 29/66803 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/7855 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a fin, wherein a portion of the fin is disposed in a first layer;
a gate disposed in the first layer and adjacent to the fin; and
a gate contact electrically connected to and disposed on the gate, wherein the gate contact is in a second layer disposed on the first layer such that the gate contact is above the fin and vertically aligned with the fin.