US 11,855,189 B2
Semiconductor device and method for forming the same
Chandrashekhar P. Savant, Hsinchu (TW); Tien-Wei Yu, Kaohsiung (TW); Ke-Chih Liu, Hsinchu (TW); and Chia-Ming Tsai, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jun. 17, 2022, as Appl. No. 17/843,373.
Application 17/843,373 is a division of application No. 16/829,614, filed on Mar. 25, 2020, granted, now 11,374,114.
Prior Publication US 2022/0320320 A1, Oct. 6, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/40 (2006.01)
CPC H01L 29/66795 (2013.01) [H01L 21/0228 (2013.01); H01L 21/02186 (2013.01); H01L 29/401 (2013.01); H01L 29/4966 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor fin extending upwardly from a substrate;
a gate structure across the semiconductor fin and comprises:
a high-k dielectric layer over the semiconductor fin;
a first fluorine-containing work function layer over the high-k dielectric layer and comprising fluorine;
a first tungsten-containing layer over the first fluorine-containing work function layer;
a second fluorine-containing work function layer in contact with a top surface of the first tungsten-containing layer; and
a metal gate electrode over the second fluorine-containing work function layer; and
source/drain structures on the semiconductor fin and at opposite sides of the gate structure.