US 11,855,177 B2
Field effect transistors with dual silicide contact structures
Peng-Wei Chu, Hsinchu (TW); Ding-Kang Shih, New Taipei (TW); Sung-Li Wang, Hsinchu County (TW); and Yasutoshi Okuno, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 24, 2022, as Appl. No. 17/582,292.
Application 17/582,292 is a division of application No. 16/721,352, filed on Dec. 19, 2019, granted, now 11,233,134.
Prior Publication US 2022/0181464 A1, Jun. 9, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/165 (2006.01); H01L 29/45 (2006.01); H01L 21/02 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01)
CPC H01L 29/665 (2013.01) [H01L 21/0206 (2013.01); H01L 21/02236 (2013.01); H01L 21/02532 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/45 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
first and second fin structures on a substrate;
first and second epitaxial regions on the first and second fin structures, respectively, wherein the first epitaxial region comprises silicon and the second epitaxial region comprises silicon germanium;
a first contact structure disposed on the first epitaxial region, wherein the first contact structure comprises a first metal silicide layer in contact with the first epitaxial region, a metal capping layer in contact with the first metal silicide layer, and a first metal region in contact with the metal capping layer, and wherein the first metal silicide layer comprises a first metal; and
a second contact structure disposed on the second epitaxial region, wherein the second contact structure comprises a second metal silicide layer in contact with the second epitaxial region and a second metal region in contact with the second metal silicide layer, and wherein the second metal silicide layer and the second metal region comprise a second metal that is different from the first metal.