US 11,855,155 B2
Semiconductor device having contact feature and method of fabricating the same
Xusheng Wu, Hsinchu (TW); Chang-Miao Liu, Hsinchu (TW); Ying-Keung Leung, Hsinchu (TW); Huiling Shang, Hsinchu County (TW); and Youbo Lin, Ridgefield, CT (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Apr. 11, 2022, as Appl. No. 17/658,779.
Application 17/658,779 is a division of application No. 16/746,618, filed on Jan. 17, 2020, granted, now 11,302,784.
Prior Publication US 2022/0238661 A1, Jul. 28, 2022
Int. Cl. H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 21/283 (2006.01); H01L 29/45 (2006.01); H01L 21/285 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/401 (2013.01) [H01L 21/283 (2013.01); H01L 21/28518 (2013.01); H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 29/456 (2013.01); H01L 29/665 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a source/drain region adjacent a gate structure on a semiconductor substrate;
an insulating layer formed over the semiconductor substrate and having an interface with a top surface of the source/drain region;
a contact element extending through the insulating layer to the source/drain region, wherein the contact element includes:
a silicide region having a substantially U-shape in cross-section, wherein the silicide region extends above the interface;
a liner layer disposed along a sidewall of a metal contact layer and interfacing a top surface of the U-shaped silicide region, the liner layer having a sidewall collinear with a sidewall of the U-shaped silicide region; and
the metal contact layer over the U-shaped silicide region and within the U-shape.