CPC H01L 29/24 (2013.01) [C30B 29/32 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02631 (2013.01); H01L 21/2252 (2013.01); H01L 31/032 (2013.01); H01L 33/0029 (2013.01); H01L 33/26 (2013.01)] | 31 Claims |
1. A semiconductor structure comprising:
a substrate comprising a substantially single crystal substrate material; and
an epitaxial layer of MgxGe1-xO2-x on the substrate, with x having a value of 0≤x<1;
wherein the epitaxial layer of MgxGe1-xO2-x has a crystal symmetry compatible with the substrate material.
|