US 11,855,120 B2
Substrate for a front-side-type image sensor and method for producing such a substrate
Walter Schwarzenbach, Saint Nazaire les Eymes (FR); Oleg Kononchuk, Theys (FR); Ludovic Ecarnot, Grenoble (FR); and Christelle Michau, Bernin (FR)
Assigned to SOITEC, Bernin (FR)
Filed by Soitec, Bernin (FR)
Filed on Feb. 4, 2022, as Appl. No. 17/649,982.
Application 17/649,982 is a continuation of application No. 16/477,499, granted, now 11,282,889, previously published as PCT/FR2018/050054, filed on Jan. 10, 2018.
Claims priority of application No. 1750235 (FR), filed on Jan. 11, 2017.
Prior Publication US 2022/0157882 A1, May 19, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01); H01L 21/762 (2006.01)
CPC H01L 27/14685 (2013.01) [H01L 21/76254 (2013.01); H01L 27/14625 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A substrate for a front side imager, comprising:
a semiconductor support substrate;
an electrically insulating layer comprising at least one metal layer, a thickness of the at least one metal layer is between 10 and 100 nm;
a semiconductor active layer comprising silicon-germanium; and
a silicon layer between the electrically insulating layer and the semiconductor active layer.