US 11,855,117 B2
Semiconductor device and method of manufacturing semiconductor device
Hajime Watakabe, Tokyo (JP); Akihiro Hanada, Tokyo (JP); Marina Mochizuki, Tokyo (JP); Ryo Onodera, Tokyo (JP); Fumiya Kimura, Tokyo (JP); and Isao Suzumura, Tokyo (JP)
Assigned to JAPAN DISPLAY INC., Tokyo (JP)
Filed by Japan Display Inc., Tokyo (JP)
Filed on Feb. 4, 2021, as Appl. No. 17/167,081.
Claims priority of application No. 2020-025023 (JP), filed on Feb. 18, 2020.
Prior Publication US 2021/0257402 A1, Aug. 19, 2021
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14643 (2013.01) [H01L 27/1461 (2013.01); H01L 27/14636 (2013.01); H01L 27/14689 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A semiconductor device comprising a photosensor including a photodiode formed on a substrate,
wherein the photodiode includes:
a cathode electrode;
a laminated structure that is formed on the cathode electrode and in which an N+ layer, an I layer, and a P+ layer are laminated in this order;
an anode electrode formed on the P+ layer;
a first insulating film formed so as to cover a portion of the anode electrode and edges of the laminated structure; and
a metal wiring connected to the anode electrode, and
the edges of the laminated structure are formed in forward tapered shapes in a cross-sectional view,
wherein each of the N+ layer, the I layer, and the P+ layer is formed of a-Si film,
wherein the crystallinity of the P+ layer is more deteriorated in comparison with the crystallinity of the I layer, and
wherein boron ion implantation is executed on the P+ layer after the P+ layer is formed.