US 11,855,084 B2
Integrated circuits with FinFET gate structures
Kuo-Cheng Ching, Hsinchu County (TW); Huan-Chieh Su, Changhua County (TW); Zhi-Chang Lin, Hsinchu County (TW); and Chih-Hao Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jul. 1, 2022, as Appl. No. 17/856,471.
Application 17/856,471 is a division of application No. 16/360,502, filed on Mar. 21, 2019, granted, now 11,380,682.
Claims priority of provisional application 62/749,198, filed on Oct. 23, 2018.
Prior Publication US 2022/0336452 A1, Oct. 20, 2022
Int. Cl. H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/033 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 21/0337 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823468 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first gate structure over a fin;
forming a first sidewall spacer along a sidewall of the first gate structure;
removing the first gate structure from over the fin to form a trench;
forming a second gate structure in the trench, wherein the first sidewall spacer is disposed along a sidewall of the second gate structure after the forming of the second gate structure in the trench, wherein the second gate structure includes a gate electrode layer;
removing a first portion of the second gate structure from over a top surface of the fin such that a second portion of the second gate structure remains disposed along a sidewall of the fin after the removing of the first portion of the second gate structure, wherein the first sidewall spacer is disposed over the top surface of the fin after the removing of the first portion of the second gate structure, wherein no portion of the gate electrode layer is disposed over the top surface of the fin after the removing of the first portion of the second gate structure from over the top surface of the fin;
after the removing of the first portion of the second gate structure, forming a second sidewall spacer on the first sidewall spacer disposed over the top surface of the fin; and
forming a contact feature over the top surface of the fin such that the contact feature interfaces with the second sidewall spacer.