US 11,855,083 B2
Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor
Ji-Cheng Chen, Hsinchu (TW); Ching-Hwanq Su, Tainan (TW); Kuan-Ting Liu, Hsinchu (TW); and Shih-Hang Chiu, Taichung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 8, 2022, as Appl. No. 17/666,556.
Application 17/666,556 is a continuation of application No. 15/957,912, filed on Apr. 20, 2018, granted, now 11,270,994.
Prior Publication US 2022/0165728 A1, May 26, 2022
Int. Cl. H01L 27/088 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 29/51 (2006.01); H01L 21/3105 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 21/02205 (2013.01); H01L 21/02211 (2013.01); H01L 21/28088 (2013.01); H01L 21/28556 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823462 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/42372 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/66545 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 21/31053 (2013.01); H01L 29/517 (2013.01); H01L 29/7848 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A gate structure, comprising:
a gate dielectric layer;
a work function layer surrounded by the gate dielectric layer;
a metal layer disposed over the work function layer; and
a barrier layer surrounded by the work function layer, wherein the barrier layer surrounds the metal layer, the barrier layer comprises fluorine and silicon, or fluorine and aluminum, and the barrier layer is a tri-layered structure.