US 11,855,030 B2
Package structure and method of manufacturing the same
Tsung-Shu Lin, New Taipei (TW); and Hsuan-Ning Shih, Taoyuan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 19, 2021, as Appl. No. 17/378,798.
Application 17/378,798 is a continuation of application No. 16/409,880, filed on May 13, 2019, granted, now 11,069,642.
Claims priority of provisional application 62/784,680, filed on Dec. 24, 2018.
Prior Publication US 2021/0343675 A1, Nov. 4, 2021
Int. Cl. H01L 21/56 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01)
CPC H01L 24/25 (2013.01) [H01L 21/4853 (2013.01); H01L 21/568 (2013.01); H01L 23/49816 (2013.01); H01L 23/5389 (2013.01); H01L 24/13 (2013.01); H01L 24/24 (2013.01); H01L 24/73 (2013.01); H01L 24/82 (2013.01); H01L 24/92 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/24227 (2013.01); H01L 2224/2501 (2013.01); H01L 2224/25171 (2013.01); H01L 2224/73209 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/821 (2013.01); H01L 2224/82005 (2013.01); H01L 2224/92244 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
a semiconductor die having an active side, comprising a plurality of conductive vias disposed on the active side and a dielectric layer disposed over the active side and covering a sidewall of the plurality of conductive vias;
an insulating encapsulation, encapsulating the semiconductor die, wherein the active side and the plurality of conductive vias of the semiconductor die are separated from the insulating encapsulation through the dielectric layer;
a first redistribution circuit structure, disposed on a first side of the insulating encapsulation and electrically coupled to the semiconductor die; and
a second redistribution circuit structure, disposed on a second side of the insulating encapsulation and electrically coupled to the semiconductor die, the second side being opposite to the first side.