US 11,854,994 B2
Redistribution structure for integrated circuit package and method of forming same
Chen-Hua Yu, Hsinchu (TW); An-Jhih Su, Taoyuan (TW); Der-Chyang Yeh, Hsinchu (TW); Li-Hsien Huang, Zhubei (TW); and Ming Shih Yeh, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 28, 2022, as Appl. No. 17/815,660.
Application 17/815,660 is a division of application No. 17/015,370, filed on Sep. 9, 2020, granted, now 11,444,034.
Claims priority of provisional application 63/026,378, filed on May 18, 2020.
Prior Publication US 2022/0367374 A1, Nov. 17, 2022
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 25/10 (2006.01)
CPC H01L 23/5389 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/214 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06586 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
attaching a die to a carrier substrate, the die comprising a first connector, a second connector, and a third connector;
forming an encapsulant over the carrier substrate and along sidewalls of the die; and
forming a redistribution structure over the die and the encapsulant, wherein forming the redistribution structure comprises:
forming a first redistribution layer, a first via of the first redistribution layer being in physical contact with the first connector, the first via being laterally offset from the first connector by a first non-zero distance in a first direction, the first via having a tapered sidewall, a second via of the first redistribution layer being in physical contact with the second connector, the second via being laterally offset from the second connector by a second non-zero distance in a second direction, the second via having a tapered sidewall, a third via of the first redistribution layer being in physical contact with the third connector, the third via being laterally offset from the second connector by a third non-zero distance in a third direction, the third via having a tapered sidewall, wherein the first direction is different from the second direction and the third direction, wherein the second direction is different from the third direction.
 
9. A method of forming a semiconductor device, the method comprising:
encapsulating a die in an encapsulant, the die comprising a first connector, a second connector, a third connector, and a fourth connector;
forming a redistribution structure over the die and the encapsulant, wherein forming the redistribution structure comprises:
forming a first via in physical contact with the first connector, the first via being laterally offset from the first connector by a first non-zero distance in a first direction, the first via having a tapered sidewall;
forming a second via in physical contact with the second connector, the second via being laterally offset from the second connector by a second non-zero distance in a second direction different from the first direction;
forming a third via in physical contact with the third connector, the third via being laterally offset from the third connector by a third non-zero distance in a third direction different from the first direction and the second direction; and
forming a fourth via in physical contact with the fourth connector, the fourth via fully landing on the fourth connector.
 
16. A method of forming semiconductor device, the method comprising:
forming an encapsulant along sidewalls of a first die and a second die, the first die comprising a first connector and a second connector, the second die comprising a third connector and a fourth connector; and
forming a redistribution structure over the first die and the second die, wherein a first via of the redistribution structure is in physical contact with a top surface of the first connector, wherein the first connector fully overlaps with the first via in a plan view, wherein a second via of the redistribution structure is in physical contact with a top surface of the second connector, wherein the second connector partially overlaps the second via in the plan view, the second via being laterally offset from the second connector by a first non-zero distance in a first direction, wherein a third via of the redistribution structure is in physical contact with a top surface of the third connector, wherein the third connector partially overlaps the third via in the plan view, the third via being laterally offset from the third connector by a second non-zero distance in a second direction different from the first direction, and wherein a fourth via of the redistribution structure is in physical contact with a top surface of the fourth connector, wherein the fourth connector partially overlaps the fourth via in the plan view, the fourth via being laterally offset from the fourth connector by a third non-zero distance in a third direction different from the first direction and the second direction.