US 11,854,913 B2
Method for detecting defects in semiconductor device
Yang-Che Chen, Hsin-Chu (TW); Wei-Yu Chou, Taichung (TW); Hong-Seng Shue, Hsinchu County (TW); Chen-Hua Lin, Yunlin County (TW); Huang-Wen Tseng, Hsinchu County (TW); Victor Chiang Liang, Hsinchu (TW); and Chwen-Ming Liu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Aug. 9, 2021, as Appl. No. 17/397,416.
Application 17/397,416 is a division of application No. 16/254,060, filed on Jan. 22, 2019, granted, now 11,088,037.
Claims priority of provisional application 62/724,237, filed on Aug. 29, 2018.
Prior Publication US 2021/0366794 A1, Nov. 25, 2021
Int. Cl. H01L 21/66 (2006.01); H01L 23/58 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 21/78 (2006.01); G01R 31/26 (2020.01); H01L 21/82 (2006.01)
CPC H01L 22/32 (2013.01) [G01R 31/2644 (2013.01); H01L 21/565 (2013.01); H01L 21/78 (2013.01); H01L 21/82 (2013.01); H01L 22/12 (2013.01); H01L 23/562 (2013.01); H01L 23/564 (2013.01); H01L 23/585 (2013.01); H01L 24/13 (2013.01); H01L 2224/13024 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for detecting defects in a semiconductor device, comprising:
singulating a die having a substrate including a circuit region and an outer border, a plurality of detecting devices disposed over the substrate and located between the circuit region and the outer border, a first probe pad and a second probe pad electrically connected to two ends of each detecting device, and a seal ring located between the outer border of the die and the detecting devices;
providing a first bump and a second bump respectively on the first probe pad and the second probe pad;
probing the first probe pad and the second probe pad through the first bumps and the second bump to determine a connection status of the detecting devices; and
recognizing a defect when the connection status of the detecting devices indicates an open circuit.