US 11,854,901 B2
Semiconductor method and device
Cheng-Hsiung Yen, Zhubei (TW); Ta-Chun Ma, New Taipei (TW); Chien-Chang Su, Kaohsiung (TW); Jung-Jen Chen, Hsinchu (TW); Pei-Ren Jeng, Chu-Bei (TW); Chii-Horng Li, Zhubei (TW); and Kei-Wei Chen, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 17, 2022, as Appl. No. 17/843,694.
Application 17/843,694 is a continuation of application No. 17/121,490, filed on Dec. 14, 2020, granted, now 11,367,660.
Application 17/121,490 is a continuation of application No. 16/443,284, filed on Jun. 17, 2019, granted, now 10,867,862, issued on Dec. 15, 2020.
Claims priority of provisional application 62/726,000, filed on Aug. 31, 2018.
Prior Publication US 2022/0328358 A1, Oct. 13, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/823431 (2013.01) [H01L 21/0206 (2013.01); H01L 21/0217 (2013.01); H01L 21/02068 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/02532 (2013.01); H01L 21/324 (2013.01); H01L 21/823481 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/1037 (2013.01); H01L 29/165 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
16. A method of manufacturing a semiconductor device, the method comprising:
forming a liner on exposed surfaces of a trench, the trench being between a first fin and a second fin;
depositing an insulation material in the trench;
forming a cap layer over the first fin, the second fin, the liner, and the insulation material, wherein the cap layer comprises:
a crystalline silicon cap portion, the crystalline silicon cap portion covering the first fin and the second fin; and
an amorphous silicon portion, the amorphous silicon portion being over respective upper surfaces of the liner and the insulation material; and
removing the amorphous silicon portion with an HCl etch.