CPC H01L 21/78 (2013.01) [H01L 21/02076 (2013.01); H01L 21/268 (2013.01); H01L 21/3043 (2013.01); H01L 21/6836 (2013.01); H01L 23/544 (2013.01); B23K 26/0006 (2013.01); B23K 26/53 (2015.10); B23K 2101/40 (2018.08); H01L 2223/5446 (2013.01)] | 13 Claims |
1. A method of forming a plurality of semiconductor die, the method comprising:
forming a damage layer beneath a surface of a die street in a semiconductor substrate using a laser;
ablating only a portion of material of the die street using the laser;
singulating the semiconductor substrate into a plurality of semiconductor die through sawing along the die street;
removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die; and
spraying the plurality of semiconductor die with a liquid while applying the sonic energy;
wherein the sonic energy is applied directly to a spindle coupled with a chuck and transmitted to the chuck through the spindle, wherein the semiconductor substrate is upon the chuck.
|