CPC H01L 21/3086 (2013.01) [H01L 21/0217 (2013.01); H01L 21/0276 (2013.01); H01L 21/02186 (2013.01); H01L 21/02282 (2013.01); H01L 21/0337 (2013.01); H01L 21/3081 (2013.01); H01L 21/31053 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01); H01L 21/823431 (2013.01)] | 20 Claims |
1. A method, comprising:
forming a first layer on a substrate;
forming a first plurality of trenches in the first layer by a first patterning process;
forming a second plurality of trenches in the first layer by a second patterning process, resulting in combined trench patterns in the first layer, wherein a first trench of the second plurality of trenches connects two trenches of the first plurality of trenches; and
forming dielectric spacer features on sidewalls of the combined trench patterns, wherein a first space between two opposing sidewalls of the first trench is completely filled by the dielectric spacer features and a second space between two opposing sidewalls of one of the two trenches is partially filled by the dielectric spacer features.
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