US 11,854,802 B2
Super-flexible transparent semiconductor film and preparation method thereof
Yukun Zhao, Suzhou (CN); Shulong Lu, Suzhou (CN); Zhiwei Xing, Suzhou (CN); and Jianya Zhang, Suzhou (CN)
Assigned to Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano), Chinese Academy of Sciences, Jiangsu (CN)
Appl. No. 17/299,954
Filed by Suzhou Institute of Nano-Tech and Nano-Bionics (Sinano), Chinese Academy of Sciences, Suzhou (CN)
PCT Filed Apr. 3, 2020, PCT No. PCT/CN2020/083148
§ 371(c)(1), (2) Date Jun. 4, 2021,
PCT Pub. No. WO2021/189523, PCT Pub. Date Sep. 30, 2021.
Claims priority of application No. 202010213156.3 (CN), filed on Mar. 24, 2020.
Prior Publication US 2022/0310384 A1, Sep. 29, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/0259 (2013.01) [H01L 29/66522 (2013.01); H01L 29/7842 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02502 (2013.01); H01L 21/02603 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A preparation method of a super-flexible transparent semiconductor film, comprising:
providing an epitaxial substrate;
growing a sacrificial layer on the epitaxial substrate;
stacking and growing at least one layer of Al1-nGanN epitaxial layer on the sacrificial layer, wherein 0<n≤1;
growing a nanopillar array containing GaN materials on the Al1-nGanN epitaxial layer;
etching the sacrificial layer so as to peel off an epitaxial structure on the sacrificial layer as a whole; and
transferring the epitaxial structure after peeling onto a surface of a flexible transparent substrate.