CPC H01L 21/0259 (2013.01) [H01L 29/66522 (2013.01); H01L 29/7842 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02502 (2013.01); H01L 21/02603 (2013.01)] | 18 Claims |
1. A preparation method of a super-flexible transparent semiconductor film, comprising:
providing an epitaxial substrate;
growing a sacrificial layer on the epitaxial substrate;
stacking and growing at least one layer of Al1-nGanN epitaxial layer on the sacrificial layer, wherein 0<n≤1;
growing a nanopillar array containing GaN materials on the Al1-nGanN epitaxial layer;
etching the sacrificial layer so as to peel off an epitaxial structure on the sacrificial layer as a whole; and
transferring the epitaxial structure after peeling onto a surface of a flexible transparent substrate.
|