US 11,854,800 B2
Device and method for high pressure anneal
Szu-Ying Chen, Hsinchu (TW); Ya-Wen Chiu, Tainan (TW); Cheng-Po Chau, Tainan (TW); Yi Che Chan, Hsinchu (TW); Chih Ping Liao, Hsinchu (TW); YungHao Wang, Hsinchu (TW); and Sen-Hong Syue, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 25, 2021, as Appl. No. 17/329,477.
Application 17/329,477 is a division of application No. 16/417,007, filed on May 20, 2019, granted, now 11,037,781.
Claims priority of provisional application 62/692,168, filed on Jun. 29, 2018.
Prior Publication US 2021/0280414 A1, Sep. 9, 2021
Int. Cl. H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 21/762 (2006.01)
CPC H01L 21/02321 (2013.01) [H01L 21/02271 (2013.01); H01L 21/02345 (2013.01); H01L 21/02373 (2013.01); H01L 21/76224 (2013.01); H01L 21/76883 (2013.01); H01L 21/76895 (2013.01); H01L 21/823481 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of using a processing device comprising:
performing a wet anneal process, the performing the wet anneal process comprising:
using a controller to set a temperature control device to raise the temperature in an inner shell of a main body; and
flowing a first chemical and a second chemical from process sources into the inner shell, the first chemical being a first gas and the second chemical being a liquid;
stopping flow of the first chemical and the second chemical from the process sources;
releasing the first chemical and the second chemical from the inner shell to a wet anneal vent line of a process vent line;
using a separator to separate the first chemical from the second chemical;
sending the separated first chemical to a dry anneal vent line of the process vent line; and
sending the separated second chemical to the process sources.