US 11,854,776 B2
Permeance magnetic assembly
Tsung-Jen Yang, Hsin-Chu (TW); Yi-Zhen Chen, Hsin-Chu (TW); Chih-Pin Wang, Hsin-Chu (TW); Chao-Li Shih, Jhudong Township (TW); Ching-Hou Su, Hsinchu (TW); and Cheng-Yi Huang, Hsin-Chu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jul. 28, 2022, as Appl. No. 17/876,422.
Application 17/876,422 is a division of application No. 16/596,109, filed on Oct. 8, 2019, granted, now 11,488,814.
Claims priority of provisional application 62/751,896, filed on Oct. 29, 2018.
Prior Publication US 2022/0367160 A1, Nov. 17, 2022
Int. Cl. H01J 37/34 (2006.01); C23C 14/35 (2006.01)
CPC H01J 37/3408 (2013.01) [C23C 14/35 (2013.01); H01J 37/3458 (2013.01); H01J 2237/152 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
producing a magnetic field using a magnetic assembly contained within a chamber, the magnetic assembly comprising:
an inner permeance annulus; and
an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region having a width greater than other regions of the outer permeance annulus, wherein the width is along a plane aligned with a surface of the outer permeance annulus, and the outer permeance annulus has a uniform thickness along a dimension orthogonal to the plane, wherein the outer permeance annulus comprises (a) a main structure that is a single continuous piece and (b) a permeance extension structure that is a separate piece from the main structure; and
sputtering a target disposed within the chamber using an electromagnetic field of ions controlled by the magnetic field, such that a material sputtered from the target is deposited onto a wafer within the chamber.