US 11,854,766 B2
DC bias in plasma process
Sheng-Liang Pan, Hsinchu (TW); Bing-Hung Chen, San-Xia (TW); Chia-Yang Hung, Kaohsiung (TW); Jyu-Horng Shieh, Hsinchu (TW); Shu-Huei Suen, Jhudong Township (TW); Syun-Ming Jang, Hsinchu (TW); and Jack Kuo-Ping Kuo, Pleasanton, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 20, 2022, as Appl. No. 17/869,557.
Application 17/869,557 is a continuation of application No. 16/177,530, filed on Nov. 1, 2018, granted, now 11,404,245.
Claims priority of provisional application 62/636,669, filed on Feb. 28, 2018.
Prior Publication US 2022/0359158 A1, Nov. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/321 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01)
CPC H01J 37/32027 (2013.01) [H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01J 37/32715 (2013.01); H01L 21/0212 (2013.01); H01L 21/02063 (2013.01); H01L 21/02233 (2013.01); H01L 21/02238 (2013.01); H01L 21/02252 (2013.01); H01L 21/31138 (2013.01); H01L 21/321 (2013.01); H01J 2237/3341 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
placing a substrate on a pedestal within a chamber, the chamber comprising a first region and a second region separated by a gas distribution plate, the pedestal being disposed within the second region of the chamber, the substrate comprising negatively charged fluorine ions; and
performing a plasma process on the substrate, performing the plasma process comprises:
generating a plasma in the first region of the chamber, the plasma comprising positively charged hydrogen ions and negatively charged oxygen ions;
filtering the plasma by the gas distribution plate into the second region of the chamber to expose the substrate to the positively charged hydrogen ions and the negatively charged oxygen ions; and
applying a negative direct current (DC) bias voltage to the pedestal to remove the negatively charged fluorine ions from the substrate and to repel the negatively charged oxygen ions from the substrate.