US 11,854,648 B2
Method of resetting storage device, storage device performing the same and data center including the same
Chunghyun Ryu, Hwaseong-si (KR); Minsung Kil, Hwaseong-si (KR); and Youngsang Cho, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 19, 2022, as Appl. No. 17/947,301.
Application 17/947,301 is a continuation of application No. 17/346,212, filed on Jun. 12, 2021, granted, now 11,488,640.
Claims priority of application No. 10-2020-0126539 (KR), filed on Sep. 29, 2020.
Prior Publication US 2023/0016511 A1, Jan. 19, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 5/14 (2006.01)
CPC G11C 5/148 (2013.01) 20 Claims
OG exemplary drawing
 
1. A method of resetting a storage device including a buffer memory and a nonvolatile memory, the method comprising:
generating an internal power supply voltage based on an external power supply voltage;
generating a first reset control signal based on a level of the internal power supply voltage;
generating a second reset control signal with a timing different from that of the first reset control signal;
generating a final reset control signal based on the first reset control signal and the second reset control signal, the final reset control signal being activated or deactivated with a timing different from those of the first reset control signal and the second reset control signal; and
performing a reset operation based on the final reset control signal when the external power supply voltage is turned off,
wherein the performing of the reset operation includes storing data stored in the buffer memory included in the storage device into the nonvolatile memory included in the storage device.