US 11,854,627 B2
Non-volatile memory device, operating method thereof, and storage device having the same
Dong Jin Shin, Hwaseong-si (KR); Ji Su Kim, Seoul (KR); Dae Seok Byeon, Seongnam-si (KR); Ji Sang Lee, Iksan-si (KR); Jun Jin Kong, Yongin-si (KR); and Eun Chu Oh, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Feb. 18, 2022, as Appl. No. 17/675,085.
Application 17/675,085 is a continuation of application No. 17/029,265, filed on Sep. 23, 2020, granted, now 11,295,818.
Application 17/029,265 is a continuation in part of application No. 16/744,763, filed on Jan. 16, 2020, granted, now 10,916,314, issued on Feb. 9, 2021.
Application 16/744,763 is a continuation of application No. 16/141,294, filed on Sep. 25, 2018, granted, now 10,559,362, issued on Feb. 11, 2020.
Claims priority of application No. 10-2018-0016347 (KR), filed on Feb. 9, 2018.
Prior Publication US 2022/0172786 A1, Jun. 2, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 16/26 (2006.01); G11C 16/10 (2006.01); G11C 5/14 (2006.01); G11C 16/08 (2006.01); G11C 16/32 (2006.01); G11C 11/56 (2006.01); G11C 16/24 (2006.01)
CPC G11C 16/26 (2013.01) [G11C 5/147 (2013.01); G11C 11/5642 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/24 (2013.01); G11C 16/32 (2013.01); G11C 2211/5642 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An operating method of a non-volatile memory device, the method comprising,
applying first read voltages to a selected wordline for reading least significant bit (LSB) page data;
outputting the LSB page data to an external device;
applying second read voltages to the selected wordline for reading center significant bit (CSB) page data;
outputting the CSB page data to the external device;
applying third read voltages to the selected wordline for reading a most significant bit (MSB) page data;
outputting the MSB page data to the external device;
receiving a command from the external device when at least one of the LSB page data, the CSB page data, and the MSB page data is uncorrectable; and
performing an on-chip valley search read operation in response to the command,
wherein the on-chip valley search read operation includes at least two sensing operations to identify one state among program states.