US 11,854,620 B2
Word line zoned adaptive initial program voltage for non-volatile memory
Erika Penzo, San Jose, CA (US); Han-Ping Chen, San Jose, CA (US); and Henry Chin, Fremont, CA (US)
Assigned to SanDisk Technologies LLC, Addison, TX (US)
Filed by SanDisk Technologies LLC, Addison, TX (US)
Filed on Jun. 18, 2021, as Appl. No. 17/351,533.
Prior Publication US 2022/0406380 A1, Dec. 22, 2022
Int. Cl. G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC G11C 16/08 (2013.01) [G11C 11/5628 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/3459 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 18 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a plurality of word lines comprising a plurality of word line zones;
a plurality of non-volatile memory cells coupled to the plurality of word lines; and
a control circuit coupled to the non-volatile memory cells, the control circuit configured to determine a corresponding initial program voltage for each of the word line zones, wherein each corresponding initial program voltage is determined based on a number of program erase cycles,
wherein for each word line zone, the control circuit is configured to determine the corresponding initial program voltage based on an average increase of a programmed state threshold voltage position across word lines in the word line zone.