US 11,853,870 B2
Photonic semiconductor devices and methods for manufacturing the same
Yichen Shen, Nanjing (CN); Huaiyu Meng, Nanjing (CN); Zhan Su, Nanjing (CN); Yanfei Bai, Nanjing (CN); and Jinghui Zou, Nanjing (CN)
Assigned to NANJING GUANGZHIYUAN TECHNOLOGY CO., LTD., Nanjing (CN)
Filed by Nanjing Guangzhiyuan Technology Co., Ltd., Nanjing (CN)
Filed on Apr. 22, 2022, as Appl. No. 17/727,223.
Claims priority of application No. 202110438972.9 (CN), filed on Apr. 23, 2021.
Prior Publication US 2022/0343149 A1, Oct. 27, 2022
Int. Cl. G06N 3/067 (2006.01); G02F 1/21 (2006.01); G02B 6/42 (2006.01); G02F 1/225 (2006.01)
CPC G06N 3/0675 (2013.01) [G02B 6/425 (2013.01); G02B 6/4206 (2013.01); G02F 1/212 (2021.01); G02F 1/2257 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for manufacturing a photonic semiconductor device, comprising:
dividing a photonic neural network which is a photonic network configured for the photonic semiconductor device into a plurality of sub-photonic networks;
forming the plurality of sub-photonic networks on a plurality of photonic chips;
connecting the plurality of sub-photonic networks on the plurality of photonic chips through a coupler to obtain the photonic semiconductor device carrying the photonic neural network, wherein the coupler is configured to couple light from one photonic chip to another photonic chip.