US 11,853,601 B2
Nonvolatile memory device supporting protection mode and memory system including the same
Do Hyun Kim, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Jun. 15, 2021, as Appl. No. 17/347,799.
Claims priority of application No. 10-2021-0010747 (KR), filed on Jan. 26, 2021.
Prior Publication US 2022/0236914 A1, Jul. 28, 2022
Int. Cl. G06F 3/06 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01)
CPC G06F 3/0659 (2013.01) [G06F 3/064 (2013.01); G06F 3/0619 (2013.01); G06F 3/0634 (2013.01); G06F 3/0679 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A nonvolatile memory device, comprising:
a first block comprising multiple cells;
a second block comprising multiple cells; and
an operation controller is suitable to perform:
a read operation using a multiple-level cell (MLC) method for reading first data programmed in the first block by a single level cell (SLC) method as abnormal strange value in a protection mode, in response to a read command applied from an outside,
a read operation using the SLC method for reading second data programmed in the second block by the MLC method as abnormal strange value in the protection mode, in response to the read command, and
a read operation using an SLC method on the first data or a read operation using an MLC method on the second data in a normal mode, in response to the read command.