US 11,853,213 B2
Intelligent management of ferroelectric memory in a data storage device
Jon D. Trantham, Chanhassen, MN (US); Praveen Viraraghavan, Chicago, IL (US); John W. Dykes, Eden Prairie, MN (US); Ian J. Gilbert, Chanhassen, MN (US); Sangita Shreedharan Kalarickal, Eden Prairie, MN (US); Matthew J. Totin, Excelsior, MN (US); Mohamad El-Batal, Superior, CO (US); and Darshana H. Mehta, Shakopee, MN (US)
Assigned to SEAGATE TECHNOLOGY LLC, Fremont, CA (US)
Filed by Seagate Technology LLC, Fremont, CA (US)
Filed on Apr. 27, 2022, as Appl. No. 17/730,920.
Claims priority of provisional application 63/201,394, filed on Apr. 28, 2021.
Prior Publication US 2022/0350739 A1, Nov. 3, 2022
Int. Cl. G06F 12/0802 (2016.01); G06F 3/06 (2006.01)
CPC G06F 12/0802 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0655 (2013.01); G06F 3/0679 (2013.01); G06F 2212/60 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
providing a front-end cache arranged as a non-volatile memory (NVM) comprising ferroelectric memory element (FME) cells;
retrieving speculative readback data from a main memory into the front-end cache responsive to execution of at least one read command from a client;
evaluating a write command from the client, providing a first status value to the client responsive to available cache lines in the front-end cache to accommodate writeback data associated with the write command,
providing a second status value to the client responsive to a lack of available cache lines in the front-end cache to accommodate the writeback data associated with the write command; and
writing the writeback data to the front-end cache responsive to the first status value, the retrieving of the speculative readback data and the writing of the writeback data carried out by an intelligent cache manager responsive to at least one input based on utilization of the front-end cache.