US 11,852,984 B2
Target debris collection device and extreme ultraviolet light source apparatus including the same
Sunghyup Kim, Hwaseong-si (KR); Ho Yu, Pohang-si (KR); Jeonggil Kim, Hwaseong-si (KR); and Minseok Choi, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 6, 2023, as Appl. No. 18/164,835.
Application 18/164,835 is a continuation of application No. 17/555,985, filed on Dec. 20, 2021, granted, now 11,599,031.
Application 17/555,985 is a continuation of application No. 16/835,708, filed on Mar. 31, 2020, granted, now 11,231,656, issued on Jan. 25, 2022.
Claims priority of application No. 10-2019-0103855 (KR), filed on Aug. 23, 2019.
Prior Publication US 2023/0185207 A1, Jun. 15, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/00 (2006.01); H05G 2/00 (2006.01); G21K 1/06 (2006.01)
CPC G03F 7/70916 (2013.01) [G03F 7/70033 (2013.01); G03F 7/70891 (2013.01); G21K 1/06 (2013.01); H05G 2/005 (2013.01); H05G 2/008 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing semiconductor devices, comprising:
generating, using an extreme ultraviolet (EUV) light source apparatus, EUV light, the EUV light source apparatus including an EUV vessel, a target droplet generator, a laser generator, and a target debris collection device;
reflecting, using a mirror system, the EUV light to a photomask;
receiving, using the mirror system, reflected EUV light from the photomask; and
transferring, using the mirror system, the reflected EUV light from the photomask to a semiconductor wafer,
wherein the EUV vessel comprises,
a collector configured to reflect the EUV light;
a baffle assembly configured to allow the EUV light reflected from the collector to pass through an internal transmissive region of the baffle assembly, the baffle assembly including a baffle body between the collector and an outlet port of the EUV vessel and a discharge plate, the discharge plate provided in a first end portion of the baffle body adjacent to the collector, the discharge plate configured to collect target material debris within the baffle body;
a guide structure configured to guide the target material debris collected in the discharge plate to a collection tank;
a first heating member provided in the guide structure, the first heating member configured to heat the target material debris; and
a second heating member provided in a passage of the discharge plate, the second heating member configured to heat the target material debris.