	US 11,852,964 B2
	Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device
Tsutomu Shoki, Tokyo (JP); and Takahiro Onoue, Tokyo (JP)
Assigned to HOYA CORPORATION, Tokyo (JP)
Filed by HOYA CORPORATION, Tokyo (JP)
Filed on May 20, 2021, as Appl. No. 17/325,627.
Application 17/325,627 is a continuation of application No. 16/084,332, granted, now 11,048,159, previously published as PCT/JP2017/011180, filed on Mar. 21, 2017.
Claims priority of application No. 2016-072287 (JP), filed on Mar. 31, 2016; and application No. 2016-190721 (JP), filed on Sep. 29, 2016.
Prior Publication US 2021/0294202 A1, Sep. 23, 2021
Int. Cl. G03F 1/24 (2012.01); G03F 1/84 (2012.01); G03F 1/42 (2012.01); G03F 1/26 (2012.01); G03F 1/44 (2012.01); G03F 7/20 (2006.01)

CPC G03F 1/24 (2013.01) [G03F 1/26 (2013.01); G03F 1/42 (2013.01); G03F 1/44 (2013.01); G03F 1/84 (2013.01); G03F 7/2008 (2013.01)]

20 Claims

1. A method of manufacturing a reflective mask blank including at least a multilayer reflective film-coated substrate and an absorber film, the multilayer reflective film-coated substrate comprising a substrate and a multilayer reflective film that is formed on the substrate and is configured to reflect EUV light, the absorber film being formed on the multilayer reflective film-coated substrate and configured to absorb EUV light, the method comprising:

detecting coordinates of a first fiducial mark of the multilayer reflective film-coated substrate with reference to a second fiducial mark of the absorber film by using a first defect map with reference to the first fiducial mark, the first defect map being prepared based on defect information obtained by defect inspection of the multilayer reflective film-coated substrate, and

converting the first defect map of the multilayer reflective film-coated substrate into a second defect map with reference to the second fiducial mark.