US 11,852,937 B2
Display device and method for manufacturing the display device
Kenichi Okazaki, Tochigi (JP); Yukinori Shima, Tatebayashi (JP); Daisuke Kurosaki, Utsunomiya (JP); and Masataka Nakada, Tochigi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Jul. 13, 2022, as Appl. No. 17/863,575.
Application 17/863,575 is a continuation of application No. 17/291,663, granted, now 11,392,004, previously published as PCT/IB2019/060103, filed on Nov. 25, 2019.
Claims priority of application No. 2018-229400 (JP), filed on Dec. 6, 2018.
Prior Publication US 2022/0350213 A1, Nov. 3, 2022
Int. Cl. G02F 1/1362 (2006.01); G02F 1/1368 (2006.01)
CPC G02F 1/136286 (2013.01) [G02F 1/1368 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A display device comprising a substrate, a display portion, a first wiring, and a second wiring,
wherein the display portion comprises a transistor,
wherein the transistor comprises a semiconductor layer, a gate insulating layer, and a gate electrode,
wherein the semiconductor layer at least comprises one metal element that is the same as the metal element included in the second wiring,
wherein the semiconductor layer comprises a first region overlapping with the gate electrode and a second region not overlapping with the gate electrode,
wherein the second wiring and the second region of the semiconductor layer are electrically connected by the first wiring, and
wherein a resistance of the second region and a resistance of the second wiring are lower than a resistance of the first region.