US 11,852,848 B2
Imaging lens assembly, camera module and electronic device
Wen-Yu Tsai, Taichung (TW); Heng-Yi Su, Taichung (TW); Ming-Ta Chou, Taichung (TW); Chien-Pang Chang, Taichung (TW); and Kuo-Chiang Chu, Taichung (TW)
Assigned to LARGAN PRECISION CO., LTD., Taichung (TW)
Filed by LARGAN PRECISION CO., LTD., Taichung (TW)
Filed on Jul. 22, 2020, as Appl. No. 16/935,378.
Claims priority of provisional application 62/941,937, filed on Nov. 29, 2019.
Prior Publication US 2021/0165136 A1, Jun. 3, 2021
Int. Cl. G02B 1/10 (2015.01); G02B 5/00 (2006.01); G02B 13/18 (2006.01)
CPC G02B 5/003 (2013.01) [G02B 13/18 (2013.01); G02B 2207/101 (2013.01); G02B 2207/107 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An imaging lens assembly, comprising:
a first optical element, which has a central opening, comprising:
a first surface, facing towards one side of an object side and an image side of the imaging lens assembly and surrounding the central opening;
a second surface, facing towards the other side of the object side and the image side of the imaging lens assembly and surrounding the central opening; and
a first outer diameter surface, connected to the first surface and the second surface; and
a low-reflection layer, located on at least one of the first surface and the second surface, and comprising:
a carbon black layer, an appearance thereof being black, and directly contacted with and connected to the at least one of the first surface and the second surface;
a nano-microstructure, being a porous structure form, directly contacted with and connected to the carbon black layer, and the nano-microstructure farther from the first optical element than the carbon black layer from the first optical element; and
a coating layer, directly contacted with and connected to the nano-microstructure, and the coating layer farther from the first optical element than the nano-microstructure from the first optical element;
wherein a reflectivity of the low-reflection layer at a wavelength of 400 nm is R40, a reflectivity of the low-reflection layer at a wavelength of 800 nm is R80, a reflectivity of the low-reflection layer at a wavelength of 1000 nm is R100, and the following conditions are satisfied:
R40≤0.40%;
R80≤0.40%; and
R100≤0.40%.