US 11,852,583 B2
Apparatus and method for measuring phase of extreme ultraviolet (EUV) mask and method of fabricating EUV mask including the method
Jongju Park, Hwaseong-si (KR); Raewon Yi, Suwon-si (KR); Hakseung Han, Hwaseong-si (KR); and Seongsue Kim, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd.
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 7, 2023, as Appl. No. 18/179,662.
Application 18/179,662 is a continuation of application No. 17/036,855, filed on Sep. 29, 2020, granted, now 11,635,371.
Claims priority of application No. 10-2020-0034057 (KR), filed on Mar. 19, 2020.
Prior Publication US 2023/0236124 A1, Jul. 27, 2023
Int. Cl. G01N 21/41 (2006.01); G01N 21/956 (2006.01); G03F 1/22 (2012.01); G03F 1/84 (2012.01); G03F 1/24 (2012.01); G01J 9/00 (2006.01); G01N 21/33 (2006.01)
CPC G01N 21/41 (2013.01) [G01J 9/00 (2013.01); G01N 21/956 (2013.01); G03F 1/22 (2013.01); G03F 1/24 (2013.01); G03F 1/84 (2013.01); G01N 2021/335 (2013.01); G01N 2021/95676 (2013.01); G01N 2201/061 (2013.01); G01N 2201/0636 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method of measuring a phase of an extreme ultraviolet (EUV) mask, the method comprising:
measuring reflectivity of a multilayer of a first mask pattern area of an EUV mask to be measured using a phase measuring apparatus;
measuring reflectivity of an absorber layer of the first mask pattern area using the phase measuring apparatus;
measuring diffraction efficiency of patterns of an absorber layer of a second mask pattern area of the EUV mask using the phase measuring apparatus; and
determining a phase of the EUV mask using the reflectivity of each of the multilayer and the absorber layer of the first mask pattern area and the diffraction efficiency of the patterns of the absorber layer of the second mask pattern area.