US 11,852,527 B2
Defense circuit of semiconductor device and semiconductor device including the same
Cheolhwan Lim, Suwon-si (KR); Kwangho Kim, Yongin-si (KR); and Donghun Heo, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 18, 2020, as Appl. No. 16/995,925.
Claims priority of application No. 10-2020-0001864 (KR), filed on Jan. 7, 2020.
Prior Publication US 2021/0210439 A1, Jul. 8, 2021
Int. Cl. G01J 1/44 (2006.01); G06F 21/87 (2013.01); G06F 21/71 (2013.01); G01J 1/02 (2006.01); H01L 23/00 (2006.01)
CPC G01J 1/44 (2013.01) [G01J 1/0252 (2013.01); G06F 21/71 (2013.01); G06F 21/87 (2013.01); G01J 2001/446 (2013.01); H01L 23/576 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a sensing circuit including a first semiconductor element configured to generate a first current in response to externally incident light;
a compensation circuit including a second semiconductor element configured to generate a second current depending on an ambient temperature, wherein the compensation circuit is configured to remove the second current from the first current to generate a third current;
a detection circuit configured to convert the third current into a photovoltage and to compare the photovoltage with a predetermined reference voltage to determine whether an external attack has occurred; and
a defense circuit configured to control the semiconductor device to perform a predetermined defense operation, based on a result of the determination.